advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 40v low on-resistance r ds(on) 4.2m fast switching characteristic i d 150a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.8 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 201012302 thermal data parameter 1 operating junction temperature range -55 to 150 continuous drain current, v gs @ 10v 3 80 pulsed drain current 1 320 storage temperature range total power dissipation 156 -55 to 150 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 80 continuous drain current (chip) 150 parameter rating drain-source voltage 40 ap9963agp-hf halogen-free product g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s to-220(p) the to-220 package is widely preferred for commercial-industrial power applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =60a - - 4.2 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =60a - 90 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =40a - 58 93 nc q gs gate-source charge v ds =32v - 12 - nc q gd gate-drain ("miller") charge v gs =10v - 26 - nc t d(on) turn-on delay time 2 v ds =20v - 14 - ns t r rise time i d =40a - 83 - ns t d(off) turn-off delay time r g =1 ? -25- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 2600 4160 pf c oss output capacitance v ds =25v - 600 - pf c rss reverse transfer capacitance f=1.0mhz - 260 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v , - 43 - ns q rr reverse recovery charge di/dt=100a/s - 54 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.package limitation current is 80a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap9963agp-hf
a p9963agp-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 50 100 150 200 250 300 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =60a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) i d =1ma 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) i d =1ma
ap9963agp-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =40a v ds =32v 0 1000 2000 3000 4000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge operation in this area limited by r ds(on)
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